Abstract The Ni-based 4H–SiC Schottky barrier diodes (SBDs) with Si intercalation have
been investigated. The electrical properties of SBDs are characterized by temperature …

Ni/4H-SiC Schottky barrier diodes (SBDs) are fabricated and then annealed at different
annealing temperatures to explore the Schottky barrier inhomogeneity (SBI). The macro-and …

High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …

We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …

The effects of isochronal annealing on the electrical, morphological and structural
characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current …

A Ni/SiC Schottky diode was fabricated with an α-SiC thin film grown by the inductively
coupled plasma chemical vapor deposition, ICP-CVD method on a (111) Si wafer. The α-SiC …

The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is
reported. The films were deposited using a single composite target of Si and graphite by …

This study presents a Ni/SiC–6H Schottky Barrier Diode (SBD) characterization at different
temperatures going from 77 K to 450 K. The electronic properties of this diode were reported …

It is known that a Schottky barrier height ( b) of metal/C-face 4H-SiC Schottky barrier diode
(SBD) differ from b of metal/Si-face 4H-SiC SBD. Furthermore, b of metal/4H-SiC SBD …

This work has been focused on characterization of thick 4H‐SiC layers produced by
sublimation epitaxy. Nickel Schottky contacts have been fabricated in order to characterize …