During the past several years, the research and development of InP material has made great
progress due to serving as the substrate for most optoelectronic devices operating at the …

Fe doped semi-insulating InP single crystals have been grown by using highly purified InP
materials. The uniformity of resistivity over the wafer was evaluated by using the three …

Semi-insulating (SI) InP has been industrially produced by doping Fe atoms as deep
acceptors. Fe concentrations in InP are, however, largely varied from top to tail along the …

Recently, it was found that undoped semi-insulating InP can be reproducibly obtained by
wafer annealing at 950° C for 40 h under phosphorus vapor pressure of 1 atm. Resistivity …

Publisher Summary This chapter presents a study on indium phosphide (InP) crystal growth—
substrate preparation and evaluation. InP is a III–V compound semiconductor, which is a …

Recently, it was found that undoped semi-insulating InP can be obtained by highpressure
annealing of high purity materials. The reproducibility and the uniformity was, however, not …

We have investigated the photoluminescence mapping characteristics of semi-insulating (SI)
InP wafers obtained by annealing in iron phosphide ambience (FeP 2-annealed). Compared …

Activities of Indium Phosphide in Japan Page 1 Activities of Indium Phosphide in Japan
Yasuyuk i Miyamoto Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 …

High purity InP is necessary for the preparation of high quality InP single crystal especially
low Fe content semi-insulating and annealed undoped semi-insulating InP single crystal. In …

Although indium phosphide (InP) is hardly known outside the ranks of semiconductor
specialists, it must be one of the most thoroughly investigated compound materials known …