Low-threshold InGaAs/GaAs strained-layer quantum-well lasers (lambda= 0.98 micron) with GaInP cladding layers grown by chemical beam epitaxy
Strained InGaAs/AlGaAs quantum well (QW) lasers operating at 0.98 micrometers are
currently of great interest due to their suitability for pumping erbium-doped fiber amplifiers …
currently of great interest due to their suitability for pumping erbium-doped fiber amplifiers …
Low‐threshold InGaAs strained‐layer quantum well lasers (λ= 0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy
We report on the InGaAs/GaAs/GaInP strained‐layer quantum well (QW) lasers grown by
chemical beam epitaxy (CBE). The single QW broad‐area layers have a very low threshold …
chemical beam epitaxy (CBE). The single QW broad‐area layers have a very low threshold …
Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
N Chand, EE Becker, JP Van der Ziel, SNG Chu… - Applied physics …, 1991 - pubs.aip.org
We report the growth and fabrication of InGaAs/GaAs strained quantum well (QW) lasers
with a very low threshold current density, J th, of< 50 A cm− 2 emitting at 0.98 μm. The …
with a very low threshold current density, J th, of< 50 A cm− 2 emitting at 0.98 μm. The …
High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
TK Sharma, M Zorn, F Bugge… - IEEE Photonics …, 2002 - ieeexplore.ieee.org
High-power highly strained In/sub x/Ga/sub 1-x/As quantum-well lasers operating at 1.2 μm
are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by …
are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by …
InGaAs/InGaAsP/InP strained-layer quantum well lasers at~ 2 μm
S Forouhar, A Ksendzov, A Larsson, H Temkin - Electronics Letters, 1992 - IET
The first successful operation of InGaAs strained layer quantum well (SL-QW) injection
lasers at~ 2 μm is reported. The threshold current density and the external differential …
lasers at~ 2 μm is reported. The threshold current density and the external differential …
Performance characteristics of strained InGaAs/AIGaAs quantum well lasers
DP Bour, GA Evans, NW CARLSON… - Conference on Lasers …, 1989 - opg.optica.org
Strained InGaAs quantum well (QW) lasers have been used to extend the lasing wavelength
of quantum well lasers from~ 0.9 out to nearly 1.1 μm. The structures reported here are …
of quantum well lasers from~ 0.9 out to nearly 1.1 μm. The structures reported here are …
Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers
M Chand, SNG Chu, NK Dutta, J Lopata… - IEEE journal of …, 1994 - ieeexplore.ieee.org
A 980-nm strained InGaAs quantum-well (QW) laser is the preferred pump source for an
Er/sup 3+/-doped fiber amplifier for the next generation of lightwave communication systems …
Er/sup 3+/-doped fiber amplifier for the next generation of lightwave communication systems …
InGaAs/GaAs/InGaP strained-layer-quantum-well lasers grown by gas-source molecular beam epitaxy
Aluminum-free In O. 2 Ga 0.8 As/GaAs/In 0.49 Ga 0.5 l P strained-layer-quantum-well lasers
are grown by gas-source molecular beam epitaxy (GSMBE) for the first time. Ridge …
are grown by gas-source molecular beam epitaxy (GSMBE) for the first time. Ridge …
Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy
G Zhang, J Näppi, K Vänttinen, H Asonen… - Applied physics …, 1992 - pubs.aip.org
Strained‐layer InGaAs/GaAs/GaInP separate confinement heterostructure single‐quantum
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation
SD Offsey, WJ Schaff, LF Lester… - IEEE journal of …, 1991 - ieeexplore.ieee.org
A study of strained InGaAs quantum wells grown on GaAs by molecular beam epitaxy was
performed in order to optimize the growth conditions for strained-layer single-and multiple …
performed in order to optimize the growth conditions for strained-layer single-and multiple …