InGaAlAs epilayers lattice matched to an InP substrate are grown by molecular beam epitaxy
with band gap energies varying in the range 0.8–1.42 eV. The I–V/C–V characteristics of the …

The materials problems in the In x Ga 1− x As/In 0.52 Al 0.48 As on InP (001) system, which
potentially affect the performance, reproducibility and stability of high electron mobility …

Epitaxial layers of In1− x− y Ga x Al y As with band‐gap energies varying in the range 0.78
to 1.42 eV and Al mole fraction varying from 0.05 to 0.43, are grown lattice matched to InP …

High-quality bulk InGaAs and InAlAs/InGaAs heterostructures have been grown on InP
substrates with different orientation using molecular-beam epitaxy. It was found that the …

We report an optical study of InGaAs/AlAsSb heterostructures with a type-II band alignment
that are lattice matched to InP substrates grown by molecular beam epitaxy. A strong direct …

In x Ga1− x As (x≊ 0.53) and In y Al1− y As (y≊ 0.52) epitaxial layers have been grown on
(100) InP substrates by molecular beam epitaxy (MBE) and characterized using x‐ray …

The effect of structural parameters on the transport characteristics from 15 to 300 K of
molecular beam epitaxy-grown InGaAs/InAlAs two dimensional electron gas structures …

Abstract InGaAs-In (Ga 1− x Al x) As (0⩽ x⩽ 1) multilayer heterostructures, lattice-matched to
InP, were grown with good reproducibility by a new MBE technique using a pulsed …

We have studied electron transport in a variety of doped and modulation-doped
InGaAs/AlInAs quantum wells within the context of field-effect transistor performance. Both …

The electron densities in the channel of Si δ-doped InGaAs–InAlAs high electron mobility
transistors grown on InP by molecular-beam epitaxy have been investigated by 1.4 K …