Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors

C Lee, JH Hong, J Shin, S Lee, M Kim… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Transparent oxide semiconductors are promising materials due to their various benefits,
such as high mobility and cost-efficient production. However, oxide semiconductors …

Flexible complementary oxide thin-film transistor-based inverter with high gain

SM Hsu, DY Su, FY Tsai, JZ Chen… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To
accurately read out small bio-signals, the development of high-performance flexible front …

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer

Z Wang, HA Al-Jawhari, PK Nayak… - Scientific reports, 2015 - nature.com
In this report, both p-and n-type tin oxide thin-film transistors (TFTs) were simultaneously
achieved using single-step deposition of the tin oxide channel layer. The tuning of charge …

High-gain complementary inverter based on corbino p-type tin monoxide and n-type indium-gallium-zinc oxide thin-film transistors

HJ Joo, MG Shin, SH Kwon, HY Jeong… - IEEE Electron …, 2019 - ieeexplore.ieee.org
The present work investigated the electrical characteristics of Corbino structure p-type tin
monoxide (SnO) thin-film transistors (TFTs) and demonstrated a high-performance …

Oxide-based complementary inverters with high gain and nanowatt power consumption

Y Yuan, J Yang, Z Hu, Y Li, L Du… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Oxide semiconductors are ideal candidates for flexible and transparent electronics. Here, we
report complementary inverters based on p-type tin monoxide and n-type indium-gallium …

Highly optimized complementary inverters based on p-SnO and n-InGaZnO with high uniformity

J Yang, Y Wang, Y Li, Y Yuan, Z Hu… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we
report highly optimized complementary inverters based on n-type indium–gallium–zinc …

[HTML][HTML] One-volt oxide based complementary circuit

J Wang, X Lin, Y Li, Q Xin, A Song, J Kim, J Jin… - AIP Advances, 2024 - pubs.aip.org
In low-power electronics, there is a substantial demand for high-performance p-type oxide
thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this …

Oxide thin-film transistor-based vertically stacked complementary inverter for logic and photo-sensor operations

HJ Joo, MG Shin, HS Jung, HS Cha, D Nam, HI Kwon - Materials, 2019 - mdpi.com
Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based
complementary logic circuits that are based on two-dimensional (2D) planar structures …

Complementary Inverter Circuits Based on p-Cu2O and n-ZTO Thin Film Transistors

MR Shijeesh, PA Mohan, MK Jayaraj - Journal of Electronic Materials, 2020 - Springer
This paper describes the fabrication of copper oxide and zinc tin oxide complementary
inverters where both the p-type and n-type channels were deposited by RF magnetron …

[PDF][PDF] P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

Z Wang - 2018 - repository.kaust.edu.sa
Emerging transparent semiconducting oxide (TSO) materials have achieved their initial
commercial success in the display industry. Due to the advanced electrical performance …