InGaAsP laser diodes

GH Olsen - Optical Engineering, 1981 - spiedigitallibrary.org
The advantages and properties of InGaAsP laser diodes in the 1.0 to 1. 7 um spectral region
are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating …
被引用次数：8 相关文章 所有 4 个版本

InGaAsP laser diodes

GH Olsen - Fiber optics for communications and control, 1980 - spiedigitallibrary.org
The advantages and properties of InGaAsP laser diodes in the 1.0-1.7 μm spectral region
are discussed. The structure, growth (both vapor and liquid phase epitaxy) and operating …
被引用次数：4 相关文章 所有 5 个版本

Review of InGaAsP/InP laser structures and comparison of their performance

RJ Nelson, NK Dutta - Semiconductors and Semimetals, 1985 - Elsevier
Publisher Summary This chapter reviews InGaAsP/InP laser structures and their
performance characteristics. The choice of a laser structure for a given application is …
被引用次数：10 相关文章 所有 2 个版本

Reliability of vapor-grown InGaAs and InGaAsP heterojunction laser structures

G Olsen, C Nuese, M Ettenberg - IEEE Journal of Quantum …, 1979 - ieeexplore.ieee.org
The reliabilities of vapor-grown ternary InGaAs/InGaP and quaternary InGaAsP/InP
heterojunction structures have been compared. Quaternary structures have been found to …
被引用次数：24 相关文章 所有 4 个版本

Very short wavelength (621.4 nm) room temperature pulsed operation of InGaAsP lasers

A Fujimoto, H Yasuda, M Shimura… - Japanese Journal of …, 1982 - iopscience.iop.org
InGaAsP/InGaAsP double-heterostructure laser diodes with wavelength as short as 621.4
nm at room temperature were demonstrated and their growth conditions were described …
被引用次数：30 相关文章 所有 9 个版本

Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

K Wakao, H Nishi, T Kusunoki, S Isozumi… - Applied physics …, 1984 - pubs.aip.org
InGaAsP/InGaP lasers emitting at 724-727 nm have been fabricated on GaAs substrates
using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm2 by thinning the …
被引用次数：16 相关文章 所有 8 个版本

Long wavelength InGaAsP/InP lasers for optical fiber communication systems

M Hirao, S Tsuji, K Mizuishi, A Doi… - Journal of Optical …, 1980 - degruyter.com
Fabrication and lasing characteristics of buried heterostructure InGaAsP/InP lasers emitting
at 1.3μτη are described. The optimization of stripe width and the reduction of leakage current …
被引用次数：64 相关文章 所有 4 个版本

Room temperature cw operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm

S Akiba, K Sakai, Y Matsushima, T Yamamoto - Electronics Letters, 1979 - infona.pl
Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-
phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially …
被引用次数：66 相关文章 所有 8 个版本

Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy

P Thiagarajan, AA Bernussi, H Temkin… - Applied physics …, 1995 - pubs.aip.org
The optimization of growth conditions for high quality 1.3 μm InAsP/InGaAsP laser structures
by gas source molecular beam epitaxy is reported. Measurements of photoluminescence …
被引用次数：34 相关文章 所有 5 个版本

Modeling of gain for InGaAsP-based lasers

MS Hybertsen, RF Kazarinov, GA Baraff… - … and Simulation of …, 1995 - spiedigitallibrary.org
Experimental and theoretical results for gain in bulk and multiquantum well active layer 1.3
micrometers InGaAsP based lasers are reported. Gain, loss, transparency energy, and …
被引用次数：18 相关文章 所有 4 个版本