In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …

In this paper, we present a study of a Ti/Ni/Al contact on n-type 4H-SiC and compare it with
Al/Ni/Al contact. X-ray diffraction analysis was used to identify the intermetallic compound …

The effect of roughness and chemical treatment of 3C-SiC film surface on Ni ohmic contact
was studied in this work. 3C-SiC (111) film was grown on Si (111) in a chemical vapor …

The contact resistivities of Al and Ti ohmic contacts to n-type 3C-SiC were measured using
the circular TLM method. The surface doping concentration under the contact was increased …

3C‐SiC, the only polytype which can be heteroepitaxially grown on large diameter silicon
substrates, is a promising material to achieve power Schottky diodes. To carry out such …

The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron
sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and …

We present a new ohmic contact material NiSi2 to n-type 6H-SiC with a low specific contact
resistance. NiSi2 films are prepared by annealing the Ni and Si films separately deposited …

Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H‐
SiC were reported. The specific contact resistances were measured with the linear …

The formation of low resistivity ohmic contacts to p-type 4H–SiC is achieved. Transfer length
method (TLM)-based structures were fabricated on 0.8 µm thick epitaxial p-type silicon …

High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …