The superior electro-thermal properties of silicon carbide (SiC) power devices permit higher
temperature of operation and enable higher power density compared with silicon devices …

Silicon carbide (SiC) power modules with Ag sinter-bonding die attach were designed on
the basis of thermal stress analysis for reliable high-temperature operations. Both the finite …

This paper briefly introduces various aspects which should be considered when
implementing Silicon Carbide (SiC) based metal-oxide-semiconductor-field-effect-transistors …

The application of existing reliability test standards, based on Si technology, to SiC power
MOSFET reliability qualification can in some cases result in ambiguous test results …

The aim of this paper is to provide an extensive overview about the state-of-art commercially
available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed …

To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

In this paper, we present reliability and stability data based on a large body of data
accumulated from high volume production of SiC power MOSFETs. The SiC MOSFETs …

SiC power devices offer performance advantages over competing Si-based power devices,
due to the wide bandgap and other key materials properties of 4H-SiC. For example, SiC …

This paper proposes a thorough experimental characterization of the performance of
commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is …

The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for
applications where high temperature is required. The metal-oxide-semiconductor (MOS) …