… of the two-dimensional carrier concentration profiles is demonstrated for doped (… resistance
microscopy (SSRM). SSRM (21, 22) is based on the contact mode atomic force microscope. A …

… , the local spreading resistance is adjusted and described … carrier mobility, n and p being
the carrier concentration for holes and electrons, respectively, the effective carrier concentration …

… resistance microscopy (SSRM) has been demonstrated to have attractive concentration …
Thurber mobility relations8 to go from resistivity to carrier (or active dopant) concentration. …

… It is in essence an atomic force microscope equipped with a conducting tip … resistance value
derived from the measured electrical current is a function of the local carrier concentration at …

… to the spreading resistance in the vicinity of the tip. The spreading resistance is given by Rs
ρ… pμp), where μ is the carrier mobility and n and p are the carrier concentrations for holes and …

… (2D) carrier concentration profiling using scanning spreading resistance microscopy (SSRM)1 …
SSRM has shown excellent junction delineation and resistance contrast for higher dopant …

… microscopy modes, scanning capacitance microscopy, Kelvin probe microscopy, scanning
spreading resistance microscopy… -scale measurement of carrier concentration profiles for the …

… In order to implement a 3D-methodology with a 2D-imaging technique, we acquired 2D-carrier
concentration maps on successive cross-section planes through the device of interest. …

… The spreading resistance value derived from the measured electrical current is a … local
carrier concentration at the surface region surrounding the probe’s tip. The spreading resistance …

… profiles of the NWs are determined from the measured spreading resistance and calibrated
by the known carrier concentration of the underlying epilayer. A model is provided …