… 1 shows a schematic of our InAs PHEMT. Our devices are built in an InP substrate using
InAlAs as barrier and cladding layers [7]. An alternative approach to InAs channel transistors is …

… slope of this characteristic, we thus deduced the internal optical loss ( α i ) to be 9 cm − 1 as
commonly measured for InP … to QWs and QDhs grown on InP (respectively, 60 A ∕ cm 2 per …

… Simple optimization of ADQW band structure results in a maximum slope efficiency ~3.8 times
larger than that of SQW EAMs at a reduced operating bias field of 34 kV/cm compared with …

… study the growth of InAs quantum dots with InGaAsP barriers on (0 0 1) InP substrates for 1.55
… operation at room temperature with a threshold of 25.9 mA and slope efficiency of 0.3 A/W. …

… We report two highly strain-balanced InP-based AlInAs/GaInAs quantum cascade lasers
emitting near … The slope efficiency is also relatively temperature insensitive with characteristic …

… of 737 A/cm 2 and a slope efficiency of 0.028 W/A under CW … current density and very low
slope efficiency for the QD lasers… To further improve the slope efficiency of the QD laser on Si, …

… Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (⁠
0.2 W ∕ A per facet) and output power ( P out = 20 mW ) ⁠, close to those of conventional …

… characteristics such as differential quantum efficiency, peak optical emission power, slope
efficiency, and maximum operating temperature are observed to be maximized for structures …

… with the InP-based material system AlInAs/GaInAs. With additional AlAs and InAs layers a …
(P max ), slope efficiency and front facet wall plug efficiency. Again a clear improvement of …

… the slope efficiency increases from 36.4 to 70 mW/A. Moreover, the tunability of the EC laser
is extended to 104 nm covering the wavelengths from 1457 to 1561 nm with a relatively low …