A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

S Hong, JW Park, HJ Kim, Y Kim… - Journal of Information …, 2016 - Taylor & Francis
… In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed
amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to improve …

[PDF][PDF] An ultra closely π‐stacked organic semiconductor for high performance field‐effect transistors

L Li, Q Tang, H Li, X Yang, W Hu, Y Song… - Advanced …, 2007 - shuaigroup.net
… Hence, theoretically speaking, a π stacked structure is expected to provide more …
semiconductors which exhibit high mobility and high on/off ratio usually possess herringbone …

Semiconductor stacked structure, semiconductor device and their manufacturing methods; Handotai sekiso kozo, handotai sochi oyobi sorerano seizo hoho

Y Uchida, S Takaya - 1995 - osti.gov
… compound semiconductor stacked structure in which the lattice constant of the semiconductor
… first compound semiconductor, the second compound semiconductor has the same crystal …

[PDF][PDF] Highly stable transparent amorphous oxide semiconductor thin‐film transistors having double‐stacked active layers

JC Park, S Kim, S Kim, C Kim, I Song, Y Park… - Advanced …, 2010 - silk.kookmin.ac.kr
device structure. The addition of Hf can suppress the growth of the columnar structure and
… Motivated by this background information, this work used a double-stacked active layer for …

Electrical characterization of 4H-SiC metal–oxide–semiconductor structure with Al2O3 stacking layers as dielectric

PK Chang, JG Hwu - Applied Physics A, 2018 - Springer
… Current–voltage (I–V) and capacitance–voltage (C–V) measurements were performed with
Agilent B1500A semiconductor device analyzer. The capacitance equivalent thicknesses (…

Improvement of the performance and stability of oxide semiconductor thin-film transistors using double-stacked active layers

JC Park, HN Lee - IEEE electron device letters, 2012 - ieeexplore.ieee.org
… on the activelayer structures of AOS TFTs. We fabricated double-stacked active layers …
Therefore, the double-stacked active-layer structure is a promising approach for the develop…

Semiconductor stacked structure, its manufacturing method and the semiconductor device; Handotai sekiso kozo to sono seizo hoho oyobi sore wo mochiita handotai …

Y Uchida - 1995 - osti.gov
… In a stacked structure where a GaAs semiconductor layer is formed on a Si substrate, the …
of deterioration of the performance of the semiconductor device. In this invention, AlAs or InAs …

A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure

TY Chang, CL Chang, HY Lee… - IEEE electron device …, 2010 - ieeexplore.ieee.org
stacking MIS solar cell structure shows an effective way to enlarge Voc and has potential to
achieve a Voc larger than 1.23 V. Based on the stacking structure, we … –PEC devices can be …

Alignment and stacking of semiconductor photonic bandgaps by wafer-fusion

S Noda, N Yamamoto, M Imada… - Journal of lightwave …, 1999 - opg.optica.org
… 12 shows the schematic structure of the device investigated in this work, where the wafers
A and B are integrated with the wafer-fusion technique. The wafer A has seven periods of …

Vertically stacked and self-encapsulated van der Waals heterojunction diodes using two-dimensional layered semiconductors

J Miao, Z Xu, Q Li, A Bowman, S Zhang, W Hu, Z Zhou… - Acs Nano, 2017 - ACS Publications
… Such vertical 2D van der Waals heterostructure could be a viable approach for achieving
high performance 2D semiconductor devices including photodetectors and heterojunction …