… portion of material atop stack layer is lower than layer stack structure, its lower shape center
… due to its shape center is higher than layer stack structure. In that case, the overall package …

… devices. Therefore, it is very important to establish a concrete understanding of the device
… Furthermore, to be implemented in novel devices applications, various device structures …

… T-shaped device structure with a 190 nm diameter and 600 nm height W electrode was …
The electrical characteristics of the selector devices were tested using a semiconductor device …

… method is the ability to fabricate multilayer polymer semiconductor devices, while
preserving each polymer’s own morphological/structural characteristics. For this purpose, we …

… to ensure accurate prediction of the subthreshold characteristics of the device. As the stacked
channel structure involves different scattering mechanisms (surface roughness, phonon, …

… semiconductor memory (NVM) devices with stacked tunneling … of NVM device were achieved
by adopting stacked tunneling … was observed for device with stacked charge trapping layer. …

… Random bilayer stacks were fabricated by manual stacking of individual MoS 2 and WS 2
MLs; thus the rotation-misfit order is unknown. Heteroepitaxial stacking growth, in which the …

… arising due to scaling down of devices, a paradigm shift is occurring … semiconductor devices
are becoming primary choice for future CMOS technology. Multigate semiconductor devices …

… a 3-D stacked synapse array and present the structure, operation, and … Korea Semiconductor
Research Consortium support program for the development of future semiconductor devices…

… structure—the inserted-oxide FinFET (iFinFET)—has been proposed [3]. A GAA FET structure
is currently one of the promising device structures that … by the Future Semiconductor Device …