… transient growth (a "stack" ofthin layers), we have recently been able to determine the associated
change in each atomic species for the US-pm-wavelength InGaAsP … of InGaAsP alloys …

… InGaAsP/InP layers grown by the LPE-sliding growth … growth mechanism of the very thin
layer, the transient region having a thickness of 60 to 75 A is formed at the onset of the growth …

… The liquid phase epitaxy (LPE) growth of InGaAsP on GaAs in the immiscible region has been
… To examine the effect of the transient layer on In conclusion, LPE growth of InGaAsP was …

… the achievements in all areas of the growth and usage in InGaAsP lattice-matched to InP made
… dissolved material to grow epitaxially onto the substrate. In a sliding graphite boat system …

… and Panish for the LPE growth." In addition to their model, the effects of strain in the
epitaxial layer due to lattice-mismatch with the substrate are considered as the mismatch strain …

… epitaxy allows several molecular beam epitaxy (MBE) concepts to take place in a metalorganic
chemical vapor deposition reactor. In this technique, the growth of … gas flow transients and …

… was changed from GaAs to InGaAsP due to solid phase epitaxy. The InGaAsP pregrowth
layer enabled us to grow high-quality InGaAsP layers without deforming the InP corrugations. …

… II T on the transient growth rate of InOaAs and InOaAsP for constant growth times of 50 ms. …
Figure 2 shows that the transient growth rate is very sensitive to llT; this resuh is different …

… InGaAsP layer in the grooves. The objective of this study is to find out whether the composition
of the InGaAsP … when the layer is grown by liquidphase epitaxy (LPE). Our results indicate …

… In this chapter, the initial transient phenomena on the variation of the solid composition and
the growth rate in the LPE growth of In,Ga, „As,P_, (y < 0.01) is studied in detail by using the …