… porous GaAs formed electrochemically in HCl solution exhibits ‘‘green’’ and ‘‘infrared’’ PL.
The size distribution of the pores … ’’ PL observed in porous GaAs are evidently due to different …

… porous GaAs was selectively achieved by polarization below the overall PFP. From the porous
GaAs patterns visible photoluminescence … of light emitting porous GaAs micropatterns of …

… In this paper, we report the porous GaAs preparation and the epitaxial capping of the porous
… The structural and optical properties of π –GaAs capped by thin GaAs layer are studied …

… and photoluminescence (PL) studies on porous layers produced on a heavily p-doped (100)
GaAs wafer by electrochemical anodic etching. The evolution of porous GaAs structure as a …

… Calculations of the exciton energies for GaAs nanoclusters … Porous GaAs has the potential
to provide these results. … of π -GaAs formed electrochemically on n- and p-type GaAs (1 0 0) …

… , we studied in detail porous GaAs films obtained using the electrochemical anodization
technique. It was shown that: (i) the intensity of the RS lines for porous surface is usually larger …

… GaAs cap layer on porous GaAs (GaAs/ π-GaAs). We focus on the structural and the
photoluminescence properties of GaAs/ π-GaAs … state photoluminescence (PL) and time-resolved …

… first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using
HF/… -GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs …

… the visible photoluminescence of por-GaAs, we have measured the photoluminescence
spectra … oxides prepared by chemical means not on the surface of GaAs Fig. 3b, curves 4 and 5, …

… earlier for porous Si, GaAs [8], we proposed the method for a formation of porous GaAs layers.
The … and photoluminescence of porous layers of GaAs formed by electrochemical etching. …