Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, JM Chauveau, R Brenier, V Sallet… - Applied Physics …, 2016 - pubs.aip.org
resistance microscopy (SSRM) was performed on non-intentionally doped (nid) ZnO nanowires
… For this purpose, an SSRM calibration profile has been developed on homoepitaxial ZnO

… imaging and p-type doping assessment of ZnO/ZnO: Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy

L Wang, V Sallet, C Sartel, G Brémond - Applied Physics Letters, 2016 - pubs.aip.org
… of ZnO p-type doping in terms of reliability and reproducibility. 5 The difficulty of doping ZnO
… 6–9 Recently, ZnO nanowires (NWs) have attracted increasing attention and are considered …

Evidence of piezoelectric potential and screening effect in single highly doped ZnO: Ga and ZnO: Al nanowires by advanced scanning probe microscopy

O Synhaivskyi, D Albertini, P Gaffuri… - The Journal of …, 2021 - ACS Publications
resistance microscopy (SSRM) is carried out on a series of samples of zinc oxide (ZnO)
nanowires … density causing a Fermi level pinning when ZnO nanowires are grown at a high pH …

Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire

X Lin, XB He, TZ Yang, W Guo, DX Shi, HJ Gao… - Applied physics …, 2006 - pubs.aip.org
… before, a series of two-terminal-method measurement and the I - V curves show that the
contact is Ohmic and the contact resistance is unapparent compared to the resistance of ZnO

In situ probing electrical response on bending of ZnO nanowires inside transmission electron microscope

KH Liu, P Gao, Z Xu, XD Bai, EG Wang - Applied Physics Letters, 2008 - pubs.aip.org
… measurements of individual ZnO nanowires in combination … situ high-resolution transmission
electron microscopy (TEM) … high resistance at the two contact points of the nanowire ends…

The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy

JH He, CH Ho - Applied Physics Letters, 2007 - pubs.aip.org
resistances in a dissimilar bias range: the actual p -type Si ∕ n -type ZnO heterojunction
diode, the contact resistance … diode), and the contact resistance between metal/ n -type ZnO (or …

ZnO nanowire transistors

J Goldberger, DJ Sirbuly, M Law… - The Journal of Physical …, 2005 - ACS Publications
… Early studies of ZnO nanowire/ribbon device focused on their … large contact resistances as
a consequence of the Au−ZnO … electron microscope (SEM) image of a typical ZnO nanowire

Mechanical properties of ZnO nanowires under different loading modes

F Xu, Q Qin, A Mishra, Y Gu, Y Zhu - Nano Research, 2010 - Springer
… properties of ZnO nanowires (NWs) under different loading modes has been carried out.
In situ scanning electron microscopy (SEM) tension and buckling tests on single ZnO NWs …

Nanofabrication on ZnO nanowires

J Zhan, Y Bando, J Hu, D Golberg - Applied physics letters, 2006 - pubs.aip.org
ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission
electron microscope… The polar ZnO surfaces have a higher resistance to irradiation than …

Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section

YF Lin, WB Jian, CP Wang, YW Suen, ZY Wu… - Applied physics …, 2007 - pubs.aip.org
ZnO nanowires (NWs) with a circular cross section and∼ 40 nm in diameter have been
synthesized and utilized to fabricate two-contact ZnO … -temperature resistances. IV curves of low-…