Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2
We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …
Field effect transistors with current saturation and voltage gain in ultrathin ReS2.
CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc… - ACS Nano, 2014 - europepmc.org
We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …
[引用][C] Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2
CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc… - ACS Nano, 2014 - cir.nii.ac.jp
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS<sub>2</sub>
| CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …
| CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …
Field effect transistors with current saturation and voltage gain in ultrathin ReS2
CM Corbet, C McClellan, A Rai, SS Sonde… - ACS …, 2015 - pubmed.ncbi.nlm.nih.gov
We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …