Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

Y Lee, JW DuMont, SM George - Chemistry of Materials, 2016 - ACS Publications
Trimethylaluminum (TMA, Al (CH3) 3) was used as the metal precursor, together with HF, for
the atomic layer etching (ALE) of Al2O3 using sequential, self-limiting thermal reactions …
被引用次数：128 相关文章

Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

Y Lee, JW DuMont, SM George - pstorage-acs-6854636.s3 …
Supporting Information Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of
Al2O3 Using Sequential, Self-Li Page 1 1 Supporting Information Trimethylaluminum as the …
[PDF] colorado.edu

[PDF][PDF] Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

Y Lee, JW DuMont, SM George - Chem. Mater, 2016 - colorado.edu
Trimethylaluminum (TMA, Al (CH3) 3) was used as the metal precursor, together with HF, for
the atomic layer etching (ALE) of Al2O3 using sequential, self-limiting thermal reactions …

[引用][C] Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

Y Lee, JW DuMont, SM George - Chemistry of Materials, 2016 - cir.nii.ac.jp
Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al<sub>2</sub>O<sub>3</sub>
Using Sequential, Self-Limiting Thermal Reactions | CiNii Research CiNii 国立情報学研究所 …
[PDF] academia.edu

[PDF][PDF] Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

Y Lee, JW DuMont, SM George - Chem. Mater, 2016 - academia.edu
Trimethylaluminum (TMA, Al (CH3) 3) was used as the metal precursor, together with HF, for
the atomic layer etching (ALE) of Al2O3 using sequential, self-limiting thermal reactions …