Near IR and visible photoluminescence studies of porous silicon
CH Perry, F Lu, F Namavar, NM Kalkhoran… - MRS Online …, 1991 - cambridge.org
We report photoluminescence emission and photoluminescence excitation studies of porous
silicon obtained from p-type Si (111) wafers over the range of 0.9–13.0 eV (∼ 400–1400 …
silicon obtained from p-type Si (111) wafers over the range of 0.9–13.0 eV (∼ 400–1400 …
Near IR and Visible Photoluminescence Studies of Porous Silicon
CH Perry, F Lu, F Namavar, NM Kalkhoran… - MRS Proceedings, 1991 - cir.nii.ac.jp
抄録< jats: title> ABSTRACT</jats: title>< jats: p> We report photoluminescence emission
and photoluminescence excitation studies of porous silicon obtained from< jats: italic> …
and photoluminescence excitation studies of porous silicon obtained from< jats: italic> …
Near IR and Visible Photoluminescence Studies of Porous Silicon
CH Perry, F Lu, F Namavar, NM Kalkhoran… - MRS Online Proceedings …, 1991 - Springer
We report photoluminescence emission and photoluminescence excitation studies of porous
silicon obtained from p-type Si (111) wafers over the range of 0.9–13.0 eV (~ 400–1400 nm) …
silicon obtained from p-type Si (111) wafers over the range of 0.9–13.0 eV (~ 400–1400 nm) …
NEAR IR AND VISIBLE PHOTOLUMINESCENCE STUDIES OF POROUS SILICON
CH PERRY - cambridge.org
We report photoluminescence emission and photoluminescence excitation studies of porous
silicon obtained from p-type Si (l 11) wafers over the range of 0.9-3.0 eV (,-400-1400 nm) …
silicon obtained from p-type Si (l 11) wafers over the range of 0.9-3.0 eV (,-400-1400 nm) …
Near IR and Visible Photoluminescence Studies of Porous Silicon
CH Perry, F Lu, F Namavar, NM Kalkhoran, RA Soref… - 1991 - arch.neicon.ru
ABSTRACTWe report photoluminescence emission and photoluminescence excitation
studies of porous silicon obtained from p-type Si (111) wafers over the range of 0.9–13.0 eV …
studies of porous silicon obtained from p-type Si (111) wafers over the range of 0.9–13.0 eV …