Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

WH Kim, MK Kim, WJ Maeng, J Gatineau… - Journal of The …, 2011 - iopscience.iop.org
CeO 2 thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD).
Novel Ce (iPrCp) 3 [tris (isopropyl-cyclopentadienyl) cerium] was used as a Ce precursor …
被引用次数：46 相关文章
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[PDF][PDF] Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

WH Kim, MK Kim, WJ Maeng, J Gatineau… - Journal of The …, 2011 - Citeseer
CeO2 thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD).
Novel Ce (iPrCp) 3 [tris (isopropyl-cyclopentadienyl) cerium] was used as a Ce precursor …

[引用][C] Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

WH Kim, MK Kim, WJ Maeng, J Gatineau… - Journal of The …, 2011 - cir.nii.ac.jp
Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced
Atomic Layer Deposition | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ …

Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

WH Kim, MK Kim, WJ Maeng… - Journal of the …, 2011 - yonsei.elsevierpure.com
CeO 2 thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD).
Novel Ce (iPrCp) 3 [tris (isopropyl-cyclopentadienyl) cerium] was used as a Ce precursor …

[引用][C] Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

WH KIM, MK KIM, WJ MAENG… - Journal of the …, 2011 - Electrochemical Society