Ka-band low noise amplifier using standard 0.18 µm CMOS technology

SH Yen, YS Lin - Electronics Letters, 2006 - IET
A low-power-consumption (26.93 mW) 32 GHz (Ka-band) low noise amplifier (LNA) using
standard 0.18 µm CMOS technology is reported. To achieve sufficient gain, this LNA is …
被引用次数：8 相关文章

[引用][C] Ka-band low noise amplifier using standard 0.18 [micro sign] m CMOS technology

SH Yen, YS Lin - Electronics Letters, 2006 - ui.adsabs.harvard.edu
Ka-band low noise amplifier using standard 0.18 [micro sign]m CMOS technology - NASA/ADS
Now on home page ads icon ads Enable full ADS view NASA/ADS Ka-band low noise …

[引用][C] Ka-band low noise amplifier using standard 0.18 μm CMOS technology

SH YEN, YS LIN - Electronics Letters, 2006 - pascal-francis.inist.fr
Ka-band low noise amplifier using standard 0.18 μm CMOS technology CNRS Inist Pascal-Francis
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Ka-band low noise amplifier using standard 0.18 µm CMOS technology

SH Yen, YS Lin - Electronics Letters, 2006 - search.proquest.com
Abstract A low-power-consumption (26.93 mW) 32 GHz (Ka-band) low noise amplifier (LNA),
using standard 0.18 μm CMOS technology, is reported. To achieve sufficient gain, this LNA …

[引用][C] Ka-band low noise amplifier using standard 0.18 [micro sign] m CMOS technology

SH Yen, YS Lin - Electronics Letters, 2006 - cir.nii.ac.jp
Ka-band low noise amplifier using standard 0.18 [micro sign]m CMOS technology | CiNii
Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 …

[引用][C] Ka-band low noise amplifier using standard 0.18 μm CMOS technology

SH YEN, YS LIN - Electronics letters, 2006 - Institution of Engineering and …