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High‐throughput screening of phase‐engineered atomically thin transition‐metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit

Y Li, L Su, Y Lu, Q Luo, P Liang, H Shu, X Chen - InfoMat, 2023 - Wiley Online Library
A main challenge for the development of two‐dimensional devices based on atomically thin
transition‐metal dichalcogenides (TMDs) is the realization of metal–semiconductor junctions …
被引用次数：19 相关文章

High-throughput screening of phase-engineered atomically thin transition-metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit

Y Li, L Su, Y Lu, Q Luo, P Liang, H Shu, X Chen - Infomat, 2023 - search.proquest.com
A main challenge for the development of two-dimensional devices based on atomically thin
transition-metal dichalcogenides (TMDs) is the realization of metal–semiconductor junctions …