Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era

X Wang, C Liu, Y Wei, S Feng, D Sun, H Cheng - Materials Today, 2023 - Elsevier
Since the 1960s, the feature size of metal oxide semiconductor field-effect transistors has
been scaled down to sub-micrometer and even nanometer to increase the transistor density …

Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era

X Wang, C Liu, Y Wei, S Feng… - Materials today …, 2023 - openresearch.surrey.ac.uk
Three-dimensional transistors and integration based on low-dimensional materials for the
post-Moore’s law era - University of Surrey Logo image Menu Outputs Open Research …