Two‐stage current‐reused variable‐gain low‐noise amplifier for X‐band receivers in 65 nm complementary metal oxide semiconductor technology
In this study, a variable gain low noise amplifier (VG‐LNA) working at X band is designed
and simulated in 65 nm complementary metal oxide semiconductor technology. A two‐stage …
and simulated in 65 nm complementary metal oxide semiconductor technology. A two‐stage …
Two-stage current-reused variable-gain low-noise amplifier for X-band receivers in 65 nm complementary metal oxide semiconductor technology
MR Nikbakhsh, E Abiri, H Ghasemian, MR Salehi - IET Circuits, Devices & …, 2018 - IET
In this study, a variable gain low noise amplifier (VG-LNA) working at X band is designed
and simulated in 65 nm complementary metal oxide semiconductor technology. A two-stage …
and simulated in 65 nm complementary metal oxide semiconductor technology. A two-stage …
Two‐stage current‐reused variable‐gain low‐noise amplifier for X‐band receivers in 65 nm complementary metal oxide semiconductor technology.
MR Nikbakhsh, E Abiri… - IET Circuits, Devices …, 2018 - search.ebscohost.com
In this study, a variable gain low noise amplifier (VG‐LNA) working at X band is designed
and simulated in 65 nm complementary metal oxide semiconductor technology. A two‐stage …
and simulated in 65 nm complementary metal oxide semiconductor technology. A two‐stage …