Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma

X Liu, C Sun, B Xiong, L Niu, Z Hao, Y Han, Y Luo - Vacuum, 2015 - Elsevier
Inductively coupled plasma dry etching of epitaxially grown aluminum nitride (AlN) film using
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …
被引用次数：48 相关文章

Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma

X Liu, C Sun, B Xiong, L Niu, Z Hao, Y Han, Y Luo - Vacuum, 2015 - infona.pl
Inductively coupled plasma dry etching of epitaxially grown aluminum nitride (AlN) film using
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …

[引用][C] Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma

X Liu, C Sun, B Xiong, L Niu, Z Hao, Y Han, Y Luo - Vacuum, 2015 - ui.adsabs.harvard.edu
Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma
- NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Smooth …