Implementation of HfSiON gate dielectric for sub-60nm DRAM dual gate oxide with recess channel array transistor (RCAT) and tungsten gate

SG Park, BJ Jin, HL Lee, HB Park… - IEDM Technical …, 2004 - ieeexplore.ieee.org
In this work, HfSiON gate dielectric is integrated for the first time in dual gate oxide of DRAM
with recess channel arrary transistor (RCAT) and W/poly-Si gate for the development of sub …
被引用次数：249 相关文章

[引用][C] Implementation of HfSiON gate dielectric for sub-60nm DRAM dual gate oxide with recess channel array transistor (RCAT) and tungsten gate

SG PARK, BJUN JIN, U CHUNG… - IEEE International …, 2004 - pascal-francis.inist.fr
Implementation of HfSiON gate dielectric for sub-60nm DRAM dual gate oxide with recess
channel array transistor(RCAT) and tungsten gate CNRS Inist Pascal-Francis CNRS Pascal …

[引用][C] Implementation of HfSiON gate for sub-60nm DRAM dual gate oxide recess channel array transistor (RCAT) and Tungsten gate

SG PARK - IEDM Tech. Dig., 2004, 2004 - cir.nii.ac.jp
Implementation of HfSiON gate for sub-60nm DRAM dual gate oxide recess channel array
transistor (RCAT) and Tungsten gate | CiNii Research CiNii 国立情報学研究所 学術情報 …

[引用][C] Implementation of HfSiON gate for sub-60nm DRAM dual gate oxide recess channel array transistor (RCAT) and Tungsten gate

SG PARK - IEDM Tech. Dig., 2004, 2004 - cir.nii.ac.jp
Implementation of HfSiON gate for sub-60nm DRAM dual gate oxide recess channel array
transistor (RCAT) and Tungsten gate | CiNii Research CiNii 国立情報学研究所 学術情報 …

[引用][C] Implementation of HfSiON gate dielectric for sub-60nm DRAM dual gate oxide with recess channel array transistor (RCAT) and tungsten gate

SG PARK, BJUN JIN, HYELAN LEE, HBAE PARK… - … Electron Devices Meeting, 2004