Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene‐based field‐effect transistors

L Wang, B Wu, J Chen, H Liu, P Hu, Y Liu - Advanced materials, 2014 - Wiley Online Library
A family of two dimensional (2D) materials has recently attracted intense interest due to their
one-atom thickness and excellent physical properties in ambient conditions. The …
被引用次数：268 相关文章

[引用][C] Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors

L Wang, B Wu, J Chen, H Liu, P Hu… - Advanced …, 2014 - ui.adsabs.harvard.edu
Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for
Enhancing the Mobility of Graphene-Based Field-Effect Transistors - NASA/ADS Now on home …

Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors

L Wang, B Wu, J Chen, H Liu… - … (Deerfield Beach, Fla.), 2014 - pubmed.ncbi.nlm.nih.gov
Viable and general techniques that allow effective size control of triangular-shaped, single-
crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h …
[PDF] researchgate.net

[PDF][PDF] Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors

L Wang, B Wu, J Chen, H Liu, P Hu, Y Liu - Adv. Mater, 2014 - researchgate.net
A family of two dimensional (2D) materials has recently attracted intense interest due to their
one-atom thickness and excellent physical properties in ambient conditions. The …

Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors.

L Wang, B Wu, J Chen, H Liu, P Hu… - … Materials (Deerfield Beach …, 2013 - europepmc.org
Viable and general techniques that allow effective size control of triangular-shaped, single-
crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h …

Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors

L Wang, B Wu, J Chen, H Liu, P Hu, Y Liu - Advanced Materials, 2014 - infona.pl
Viable and general techniques that allow effective size control of triangular‐shaped, single‐
crystal, monolayer h‐BN domains grown by the CVD method, direct optical visualization of h …

[引用][C] Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors

L Wang, B Wu, J Chen, H Liu, P Hu, Y Liu - Advanced Materials, 2013 - cir.nii.ac.jp
Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for
Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors | CiNii Research CiNii 国立 …

Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors

L Wang, B Wu, J Chen, H Liu, P Hu, Y Liu - 2014 - dro.deakin.edu.au
Viable and general techniques that allow effective size control of triangular-shaped, single-
crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h …

Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors

L Wang, B Wu, J Chen, H Liu, P Hu, Y Liu - 2014 - dro.deakin.edu.au
Viable and general techniques that allow effective size control of triangular-shaped, single-
crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h …