[PDF][PDF] Photonic integration in InGaAs/InGaAsP multiple-quantum well laser structures using quantum well intermixing
B Qiu - 1998 - theses.gla.ac.uk
The damage introduced into an InGaAs/InGaAsP quantum well structure during CH4/H2
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …
[引用][C] Photonic integration in InGaAs/InGaAsP multiple multiple-quantum well laser structures using quantum well intermixing
B Qiu - 1998 - osti.gov
[PDF][PDF] PHOTONIC INTEGRATION IN InGaAs/InGaAsP MULTIPLE-QUANTUM WELL LASER STRUCTURES USING QUANTUM WELL INTERMIXING
B Qiu - 1998 - core.ac.uk
The damage introduced into an InGaAs/InGaAsP quantum well structure during CH4/H2
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …
[引用][C] Photonic integration in InGaAs/InGaAsP multiple-quantum well laser structures using quantum well intermixing
B Qiu - 1998 - theses.gla.ac.uk
The damage introduced into an InGaAs/InGaAsP quantum well structure during CH4/H2
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …
[引用][C] Photonic integration in InGaAs/InGaAsP multiple multiple-quantum well laser structures using quantum well intermixing
B Qiu - 1998 - inis.iaea.org
[PDF][PDF] PHOTONIC INTEGRATION IN InGaAs/InGaAsP MULTIPLE-QUANTUM WELL LASER STRUCTURES USING QUANTUM WELL INTERMIXING
B Qiu - 1998 - core.ac.uk
The damage introduced into an InGaAs/InGaAsP quantum well structure during CH4/H2
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …
reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W …