Evidence of atomic-scale arsenic clustering in highly doped silicon
Low temperature (675 C) epitaxial in situ doped Si layers (As, 1.5 at.%) were analyzed by
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
Evidence of atomic-scale arsenic clustering in highly doped silicon
S Duguay, F Vurpillot, T Philippe… - Journal of Applied …, 2009 - ui.adsabs.harvard.edu
Low temperature (675 C) epitaxial in situ doped Si layers (As, 1.5 at.%) were analyzed by
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
[PDF][PDF] Evidence of atomic-scale arsenic clustering in highly doped silicon
S Duguay, F Vurpillot, T Philippe, E Cadel… - JOURNAL OF …, 2009 - researchgate.net
Low temperature (675 C) epitaxial in situ doped Si layers (As, 1.5 at.%) were analyzed by
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
Evidence of atomic-scale arsenic clustering in highly doped silicon
S Duguay, F Vurpillot, T Philippe, E Cadel… - Journal of Applied …, 2009 - hal.science
Low temperature (675° C) epitaxial in situ doped Si layers (As, 1.5 at.%) were analyzed by
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
Evidence of atomic-scale arsenic clustering in highly doped silicon
S Duguay, F Vurpillot, T Philippe, E Cadel… - Journal of Applied …, 2009 - pubs.aip.org
Low temperature (675 C) epitaxial in situ doped Si layers (As, 1.5 at.%) were analyzed by
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer …
[引用][C] Evidence of atomic-scale arsenic clustering in highly doped silicon
S Duguay, F Vurpillot, T Philippe, E Cadel… - Journal of Applied …, 2009 - cir.nii.ac.jp