Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311) B substrate for stable polarization operation

N Niskiyama - IEEE Journal of Selected Topics in Quantum …, 2001 - ieeexplore.ieee.org
We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over
2% on GaAs (311) B substrate for a polarization controlled vertical-cavity surface-emitting …
被引用次数：71 相关文章

[引用][C] Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311) B substrate for stable polarization operation

N Niskiyama, M Arai, S Shinada, M Azuchi… - IEEE Journal of …, 2001 - cir.nii.ac.jp
Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B
substrate for stable polarization operation | CiNii Research CiNii 国立情報学研究所 学術情報 …

[引用][C] Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311) B substrate for stable polarization operation

N Niskiyama, M Arai, S Shinada… - IEEE Journal of …, 2001 - ui.adsabs.harvard.edu
Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B
substrate for stable polarization operation - NASA/ADS Now on home page ads icon ads …

[引用][C] Highly strained GsInAs-GaAs Quantum-well Vertical-Cavity Surface-Emitting Laser for stable polarization operation

N NISHIYAMA - IEEE, 2001 - cir.nii.ac.jp