Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

H Han, B Zhang, Z Zhang, Y Wang, C Liu, AK Singh… - Nano Letters, 2024 - ACS Publications
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on
asymmetric heterostructures, which are challenging to fabricate. AATs used for …
被引用次数：4 相关文章

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

H Han, B Zhang, Z Zhang, Y Wang, C Liu… - NANO …, 2024 - repository.hanyang.ac.kr
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on
asymmetric heterostructures, which are challenging to fabricate. AATs used for …

[引用][C] Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

H Han, B Zhang, Z Zhang, Y Wang, C Liu… - Nano …, 2024 - ui.adsabs.harvard.edu
Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction -
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Light-Triggered …

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

H Han, B Zhang, Z Zhang, Y Wang, C Liu… - Nano …, 2024 - pubmed.ncbi.nlm.nih.gov
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on
asymmetric heterostructures, which are challenging to fabricate. AATs used for …

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction.

H Han, B Zhang, Z Zhang, Y Wang, C Liu, AK Singh… - Nano Letters, 2024 - europepmc.org
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on
asymmetric heterostructures, which are challenging to fabricate. AATs used for …