Al0. 64Ga0. 36N channel MOSHFET on single crystal bulk AlN substrate
We report MOCVD-grown Al 0.87 Ga 0.13 N/Al 0.64 Ga 0.36 N metal-oxide-semiconductor-
heterojunction-field-effect-transistors on single crystal bulk AlN substrate. As compared to …
heterojunction-field-effect-transistors on single crystal bulk AlN substrate. As compared to …
Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate
A Mamun, K Hussain, R Floyd, MD Alam… - Applied Physics …, 2023 - ui.adsabs.harvard.edu
We report MOCVD-grown Al 0.87 Ga 0.13 N/Al 0.64 Ga 0.36 N metal-oxide-semiconductor-
heterojunction-field-effect-transistors on single crystal bulk AlN substrate. As compared to …
heterojunction-field-effect-transistors on single crystal bulk AlN substrate. As compared to …