Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, S Sato… - Journal of applied …, 1998 - pubs.aip.org
The low temperature growth of highly strained GaInNAs/GaAs quantum wells was
investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using …
被引用次数：92 相关文章

Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker… - Journal of Applied …, 1998 - ui.adsabs.harvard.edu
The low temperature growth of highly strained GaInNAs/GaAs quantum wells was
investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using …

Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, S Sato… - JOURNAL OF …, 1998 - pubs.aip.org
Lasers of 1.3 and 1.55 m are key components of present optical fiber communications.
However, the performance of long wavelength InGaAsP/InP lasers at high temperature is still …

Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, S Sato… - Journal of Applied …, 1998 - cir.nii.ac.jp
抄録< jats: p> The low temperature growth of highly strained GaInNAs/GaAs quantum wells
was investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using …

[引用][C] LOW TEMPERATURE GROWTH OF GALNNAS/GAAS QUANTUM WELLS BY METALORGANIC CHEMICAL VAPOR DEPOSITION USING …

Z PAN, T MIYAMOTO… - Journal of …, 1998 - American Institute of Physics