Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN
Although selective dry etches exist for GaN, it is difficult to selectively etch AlN in
heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate …
heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate …
[PDF][PDF] Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm… - csmantech.org
Although many selective dry etches exist for GaN, it is difficult to selectively etch AlN in
stacks with other conventional epitaxial materials. The reduction in etch rate resulting from …
stacks with other conventional epitaxial materials. The reduction in etch rate resulting from …
[PDF][PDF] Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm… - researchgate.net
Although selective dry etches exist for GaN, it is difficult to selectively etch AlN in
heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate …
heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate …
[引用][C] Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal… - IEEE Transactions on …, 2017 - cir.nii.ac.jp