Successive conformal mapping technique to extract inner fringe capacitance of underlap DG-FinFET and its variations with geometrical parameters

SM Sharma, S Dasgupta - IEEE Transactions on Electron …, 2017 - ieeexplore.ieee.org
We propose a new analytical model based on successive conformal mapping to compute
the bias dependent inner fringe capacitance in nonplanar multigate MOSFET structure with …
被引用次数：13 相关文章
[PDF] academia.edu

[PDF][PDF] Successive Conformal Mapping Technique to Extract Inner Fringe Capacitance of Underlap DG-FinFET and Its Variations With Geometrical Parameters

SM Sharma, S Dasgupta, MV Kartikeyan - academia.edu
We propose a new analytical model based on successive conformal mapping to compute
the bias dependent inner fringe capacitance in nonplanar multigate MOSFET structure with …

[引用][C] Successive Conformal Mapping Technique to Extract Inner Fringe Capacitance of Underlap DG-FinFET and Its Variations With Geometrical Parameters

SM Sharma, S Dasgupta… - IEEE Transactions on …, 2017 - ui.adsabs.harvard.edu
Successive Conformal Mapping Technique to Extract Inner Fringe Capacitance of Underlap
DG-FinFET and Its Variations With Geometrical Parameters - NASA/ADS Now on home page ads …
[PDF] academia.edu

[PDF][PDF] Successive Conformal Mapping Technique to Extract Inner Fringe Capacitance of Underlap DG-FinFET and Its Variations With Geometrical Parameters

SM Sharma, S Dasgupta, MV Kartikeyan - academia.edu
We propose a new analytical model based on successive conformal mapping to compute
the bias dependent inner fringe capacitance in nonplanar multigate MOSFET structure with …