[HTML][HTML] Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac) 2 reactions and enhancement by …
NR Johnson, H Sun, K Sharma… - Journal of Vacuum …, 2016 - pubs.aip.org
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac){sub 2} reactions and enhancement by H …
NR Johnson, H Sun, K Sharma - … of Vacuum Science and Technology. A …, 2016 - osti.gov
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
[引用][C] Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac) 2 reactions and enhancement by H2 …
NR Johnson, H Sun, K Sharma… - Journal of Vacuum …, 2016 - ui.adsabs.harvard.edu
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting
hydrogen fluoride and Sn(acac)2 reactions and enhancement by H2 and Ar plasmas - NASA/ADS …
hydrogen fluoride and Sn(acac)2 reactions and enhancement by H2 and Ar plasmas - NASA/ADS …
[PDF][PDF] Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac) 2 reactions and enhancement by H 2 …
NR Johnson, H Sun, K Sharma, SM George - colorado.edu
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac)(2) reactions and enhancement by H-2 and …
NR Johnson, H Sun, K Sharma… - Journal of Vacuum …, 2016 - hero.epa.gov
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac) _2 reactions and enhancement by H_2 and …
NR Johnson, H Sun, K Sharma… - Journal of Vacuum …, 2016 - inis.iaea.org
[en] Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac) 2 reactions and enhancement by H2 and Ar …
NR Johnson, H Sun, K Sharma… - Journal of Vacuum Science …, 2016 - cir.nii.ac.jp
抄録< jats: p> Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films
was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and …
was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and …
[PDF][PDF] Thermal Atomic Layer Etching of Crystalline Aluminum Nitride Using Sequential, Self-Limiting HF and Sn (acac) 2 Reactions and Enhancement by H2 and Ar …
NR Johnson, H Sun, K Sharma, SM George - 2016 - academia.edu
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac) 2 reactions and enhancement by H2 and Ar …
NR Johnson, H Sun, K Sharma… - Journal of Vacuum …, 2016 - pubs.aip.org
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
[PDF][PDF] Thermal Atomic Layer Etching of Crystalline Aluminum Nitride Using Sequential, Self-Limiting HF and Sn (acac) 2 Reactions and Enhancement by H2 and Ar …
NR Johnson, H Sun, K Sharma, SM George - 2016 - academia.edu
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …