GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
CM Zhang - 2016 IEEE Nuclear Science Symposium, Medical …, 2016 - ieeexplore.ieee.org
The DC performance of both n-and pMOSFETs fabricated in a commercial-grade 28 nm bulk
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation …
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation …
GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
C Zhang, F Jazaeri, A Pezzotta, C Bruschini… - IEEE NUCLEAR …, 2017 - boa.unimib.it
The DC performance of both n-and pMOSFETs fabricated in a commercial-grade 28 nm bulk
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation …
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation …
GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
C Zhang, F Jazaeri, A Pezzotta… - Proceedings of 2016 …, 2016 - infoscience.epfl.ch
The DC performance of both n-and pMOSFETs fabricated in a commercial-grade 28 nm bulk
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation …
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation …