[PDF][PDF] Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band
T OCHALSKI, A WÓJCIK, E KOWALCZYK… - Opto-Electronics …, 2001 - researchgate.net
Strained layer InGaAs/GaAs SCH SOW (separate confinement heterostructure single
quantum well) lasers were grown by a molecular beam epitaxy (MBE). Highly reliable CW …
quantum well) lasers were grown by a molecular beam epitaxy (MBE). Highly reliable CW …
Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band
M Bugajski, B Mroziewicz, K Regiński… - Opto-Electronics …, 2001 - infona.pl
Strained layer InGaAsIGaAs SCH SQW (separate confinement heterostructure single
quantum well) lasers were grown by a molecularbeam epitaxy (MBE). Highly reliable CW …
quantum well) lasers were grown by a molecularbeam epitaxy (MBE). Highly reliable CW …
Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band
M Bugajski, B Mroziewicz, K Regiński… - Opto-Electronics …, 2001 - yadda.icm.edu.pl
Strained layer InGaAsIGaAs SCH SQW (separate confinement heterostructure single
quantum well) lasers were grown by a molecularbeam epitaxy (MBE). Highly reliable CW …
quantum well) lasers were grown by a molecularbeam epitaxy (MBE). Highly reliable CW …
[PDF][PDF] Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band
T OCHALSKI, A WÓJCIK, E KOWALCZYK… - OPTO-ELECTRONICS …, 2001 - academia.edu
Strained layer InGaAs/GaAs SCH SOW (separate confinement heterostructure single
quantum well) lasers were grown by a molecular beam epitaxy (MBE). Highly reliable CW …
quantum well) lasers were grown by a molecular beam epitaxy (MBE). Highly reliable CW …