High endurance performance of 1T1R HfOx based RRAM at low (<20μA) operative current and elevated (150°C) temperature
B Butcher, S Koveshnikov, DC Gilmer… - 2011 IEEE …, 2011 - ieeexplore.ieee.org
Lower operation current and voltage are strongly required for scaled RRAM devices with
high density memory cell arrays. As the lower operation current reduces the size of the …
high density memory cell arrays. As the lower operation current reduces the size of the …
High endurance performance of 1T1R HfOx based RRAM at low (<20μA) operative current and elevated (150°C) temperature
B Butcher, S Koveshnikov, DC Gilmer, G Bersuker… - 2011 IEEE International … - infona.pl
Lower operation current and voltage are strongly required for scaled RRAM devices with
high density memory cell arrays. As the lower operation current reduces the size of the …
high density memory cell arrays. As the lower operation current reduces the size of the …