Graphene-edge electrode on a Cu-based chalcogenide selector for 3D vertical memristor cells

S Seo, J Lim, S Lee, B Alimkhanuly… - … applied materials & …, 2019 - ACS Publications
Resistive memristors are considered to be key components in the hardware implementation
of complex neuromorphic networks because of their simplicity, compactness, and …
被引用次数：27 相关文章

Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells

S Seo, J Lim, S Lee, B Alimkhanuly… - … applied materials & …, 2019 - khu.elsevierpure.com
Resistive memristors are considered to be key components in the hardware implementation
of complex neuromorphic networks because of their simplicity, compactness, and …

Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells.

S Seo, J Lim, S Lee, B Alimkhanuly… - … Applied Materials & …, 2019 - europepmc.org
Resistive memristors are considered to be key components in the hardware implementation
of complex neuromorphic networks because of their simplicity, compactness, and …

Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells

S Seo, J Lim, S Lee, B Alimkhanuly… - … applied materials & …, 2019 - pubmed.ncbi.nlm.nih.gov
Resistive memristors are considered to be key components in the hardware implementation
of complex neuromorphic networks because of their simplicity, compactness, and …

[引用][C] Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells

S Seo, J Lim, S Lee, B Alimkhanuly, A Kadyrov, D Jeon… - 2019