Orientation effect in electronic properties of silicon wires
AB Filonov, GV Petrov, VA Novikov… - Applied physics …, 1995 - pubs.aip.org
Electronic properties of (100),(110), and (111) oriented H‐terminated silicon quantum‐size
wires have been calculated within the self‐consistent LCAO method. The quantum …
wires have been calculated within the self‐consistent LCAO method. The quantum …
[引用][C] Orientation effect in electronic properties of silicon wires
AB Filonov, GV Petrov, VA Novikov… - Applied Physics …, 1995 - elibrary.ru
Orientation effect in electronic properties of silicon wires
AB Filonov, GV Petrov, VA Novikov… - Applied Physics …, 1995 - ui.adsabs.harvard.edu
Abstract Electronic properties of (100),(110), and (111) oriented H-terminated silicon
quantum-size wires have been calculated within the self-consistent LCAO method. The …
quantum-size wires have been calculated within the self-consistent LCAO method. The …
Orientation effect in electronic properties of silicon wires
AB Filonov, GV Petrov, VA Novikov, VE Borisenkoa - Appl. Phys. Lett, 1995 - pubs.aip.org
Electronic properties of (100),(110), and (111) oriented H-terminated silicon quantum-size
wires have been calculated within the self-consistent LCAO method. The quantum …
wires have been calculated within the self-consistent LCAO method. The quantum …
[PDF][PDF] Orientation effect in electronic properties of silicon wires
AB Filonov, GV Petrov, VA Novikov… - Appl. Phys …, 1995 - scholar.archive.org
Electronic properties of (100),(110), and (111) oriented H-terminated silicon quantum-size
wires have been calculated within the self-consistent LCAO method. The quantum …
wires have been calculated within the self-consistent LCAO method. The quantum …