Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

R Moriya, T Yamaguchi, Y Inoue, S Morikawa… - Applied Physics …, 2014 - pubs.aip.org
Graphene-based vertical field effect transistors have attracted considerable attention in the
light of realizing high-speed switching devices; however, the functionality of such devices …

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

R Moriya, T Yamaguchi, Y Inoue, S Morikawa… - arXiv preprint arXiv …, 2014 - arxiv.org
Graphene-based vertical field effect transistors have attracted considerable attention in the
light of realizing high-speed switching devices; however, the functionality of such devices …

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

R Moriya, T Yamaguchi, Y Inoue… - Applied Physics …, 2014 - ui.adsabs.harvard.edu
Graphene-based vertical field effect transistors have attracted considerable attention in the
light of realizing high-speed switching devices; however, the functionality of such devices …

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

R Moriya, T Yamaguchi, Y Inoue, S Morikawa… - Applied Physics …, 2014 - pubs.aip.org
Graphene-based vertical field effect transistors have attracted considerable attention in the
light of realizing high-speed switching devices; however, the functionality of such devices …

[引用][C] Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

R Moriya, T Yamaguchi, Y Inoue, S Morikawa… - Applied Physics …, 2014 - cir.nii.ac.jp
Large current modulation in exfoliated-graphene/MoS<sub>2</sub>/metal vertical
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