Fabrication of graphoepitaxial gate-all-around Si circuitry patterned nanowire arrays using block copolymer assisted hard mask approach
We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
[HTML][HTML] Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach
T Ghoshal, R Senthamaraikannan, MT Shaw, R Lundy… - ACS Nano, 2021 - ncbi.nlm.nih.gov
We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach
T Ghoshal, R Senthamaraikannan, MT Shaw… - ACS …, 2021 - pubmed.ncbi.nlm.nih.gov
We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach.
T Ghoshal, R Senthamaraikannan, MT Shaw, R Lundy… - ACS Nano, 2021 - europepmc.org
We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach
T Ghoshal, R Senthamaraikannan, MT Shaw… - ACS …, 2021 - pubmed.ncbi.nlm.nih.gov
We demonstrate the fabrication of sub-20 nm gate-all-around silicon (Si) nanowire field
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …
effect transistor structures using self-assembly. To create nanopatterned Si feature arrays, a …