Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS Im, HA Atwater - Applied physics letters, 1990 - pubs.aip.org
The nucleation kinetics of the amorphous‐to‐crystal transition of Si films under 1.5 MeV Xe+
irradiation have been investigated by means of in situ transmission electron microscopy in …
被引用次数：68 相关文章

Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS Im, HA Atwater - Applied Physics Letters, 1990 - cir.nii.ac.jp
抄録< jats: p> The nucleation kinetics of the amorphous-to-crystal transition of Si films under
1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron …

[引用][C] Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS IM, HA ATWATER - Applied physics letters, 1990 - pascal-francis.inist.fr
Ion irradiation enhanced crystal nucleation in amorphous Si thin films CNRS Inist Pascal-Francis
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …

Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS Im, HA Atwater - Applied Physics Letters, 1990 - pubs.aip.org
The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe+
irradiation have been investigated by means of in situ transmission electron microscopy in …

Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS Im, HA Atwater - Applied Physics Letters, 1990 - inis.iaea.org
[en] The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV
Xe+ irradiation have been investigated by means of in situ transmission electron microscopy …

Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS Im, HA Atwater - Applied Physics Letters, 1990 - ui.adsabs.harvard.edu
The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe+
irradiation have been investigated by means of in situ transmission electron microscopy in …

Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS Im, HA Atwater - Applied Physics Letters;(USA), 1990 - osti.gov
The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe
{sup+} irradiation have been investigated by means of {ital in}{ital situ} transmission electron …

[引用][C] Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS IM - Appl. Phys. Lett., 1990 - cir.nii.ac.jp
Ion irradiation enhanced crystal nucleation in amorphous Si thin films | CiNii Research CiNii
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …

[引用][C] Ion irradiation enhanced crystal nucleation in amorphous Si thin films

JS IM, HA ATWATER - Applied physics letters, 1990 - American Institute of Physics