Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond

A Pirovano, F Pellizzer, I Tortorelli, A Riganó… - Solid-State …, 2008 - Elsevier
A novel self-aligned μTrench-based cell architecture for phase change memory (PCM)
process is presented. The low programming current and the good dimensional control of the …
被引用次数：32 相关文章

Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond

A Pirovano, F Pellizzer, I Tortorelli… - Solid State …, 2008 - ui.adsabs.harvard.edu
A novel self-aligned μTrench-based cell architecture for phase change memory (PCM)
process is presented. The low programming current and the good dimensional control of the …

[引用][C] Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond

A PIROVANO, F PELLIZZER… - Solid-state …, 2008 - pascal-francis.inist.fr
Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm
node and beyond CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

A Pirovano, F Pellizzer, I Tortorelli, A Riganó… - Solid State …, 2008 - infona.pl
A novel self-aligned μTrench-based cell architecture for phase change memory (PCM)
process is presented. The low programming current and the good dimensional control of the …

[引用][C] Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

A Pirovano, F Pellizzer, I Tortorelli, A Riganó… - Solid-State …, 2008 - cir.nii.ac.jp
Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node
and beyond | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 …