The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …

Highly selective dry etching of III nitrides using an inductively coupled Cl<SUB>2</SUB>/Ar/O<SUB>2</SUB>
plasma - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …

抄録< jats: p> The selective etch characteristics of GaN, AlxGa1− xN, and InxGa1− xN have
been examined in an inductively coupled plasma reactor using Cl2/Ar/O2 as the etchant …

The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …

Abstract GaN, Al x Ga 1-x N and In x Ga 1-x N were prepared by dry etching with Cl 2/Ar/O 2
plasma. The etch rates and selectivities were determined for the nitrides using an inductively …