Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire

M Leroux, B Beaumont, N Grandjean… - Materials Science and …, 1997 - Elsevier
GaN grown by three different methods (MOVPE, GSMBE and HVPE) have been studied
using temperature (T) dependent reflectivity and photoluminescence (PL). Both non …
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Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire

M Leroux, B Beaumont, N Grandjean… - … and Engineering B …, 1997 - infoscience.epfl.ch
GaN grown by three different methods (MOVPE, GSMBE and HVPE) have been studied
using temperature (T) dependent reflectivity and photoluminescence (PL). Both non …

[引用][C] Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire

M Leroux, B Beaumont, N Grandjean… - Materials Science and …, 1997 - cir.nii.ac.jp
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire |
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[引用][C] Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire

M LEROUX, B BEAUMONT… - Materials science & …, 1997 - pascal-francis.inist.fr
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire
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[引用][C] Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire

M LEROUX, B BEAUMONT, N GRANDJEAN… - Materials science & …, 1997 - Elsevier