TEM characterisation of silicide phase formation in Ni-based ohmic contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk, J Ratajczak… - Materials …, 2011 - jstage.jst.go.jp
Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …
development of high power, high frequency and high temperature electronic devices …
[引用][C] TEM characterisation of suicide phase formation in Ni-based ohmic contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk, J Ratajczak… - Materials …, 2011 - elibrary.ru
TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk… - MATERIALS …, 2011 - jstage.jst.go.jp
Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …
development of high power, high frequency and high temperature electronic devices …
[PDF][PDF] TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk, J Ratajczak… - 2011 - academia.edu
Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …
development of high power, high frequency and high temperature electronic devices …
TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk… - MATERIALS …, 2011 - jlc.jst.go.jp
Nickel silicide ohmic contacts to 4H n-SiC were investigated using electron microscopy.
Ni/Si multilayer structures were fabricated using magnetron sputtering technique. The Ni to …
Ni/Si multilayer structures were fabricated using magnetron sputtering technique. The Ni to …
[PDF][PDF] TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk, J Ratajczak… - 2011 - researchgate.net
Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …
development of high power, high frequency and high temperature electronic devices …
TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC
W Marek, C Andrzej, K Andrian, R Jacek… - MATERIALS …, 2011 - cir.nii.ac.jp
抄録 Nickel silicide ohmic contacts to 4H n-SiC were investigated using electron microscopy.
Ni/Si multilayer structures were fabricated using magnetron sputtering technique. The Ni to …
Ni/Si multilayer structures were fabricated using magnetron sputtering technique. The Ni to …
TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk… - MATERIALS …, 2011 - jlc.jst.go.jp
Nickel silicide ohmic contacts to 4H n-SiC were investigated using electron microscopy.
Ni/Si multilayer structures were fabricated using magnetron sputtering technique. The Ni to …
Ni/Si multilayer structures were fabricated using magnetron sputtering technique. The Ni to …