EUV single patterning of random logic via using bright field mask
LE Tan, W Gillijns, JU Lee, D Xu… - Optical and EUV …, 2023 - spiedigitallibrary.org
Imec logic N2+ design rule defines a minimum via pitch of 36nm. An EUV single patterning
solution at 0.33 NA is explored on a random logic via design. From an earlier simulation …
solution at 0.33 NA is explored on a random logic via design. From an earlier simulation …
EUV single patterning of random logic via using bright field mask
LE Tan, W Gillijns, JU Lee, D Xu… - Optical and EUV …, 2023 - ui.adsabs.harvard.edu
Imec logic N2+ design rule defines a minimum via pitch of 36nm. An EUV single patterning
solution at 0.33 NA is explored on a random logic via design. From an earlier simulation …
solution at 0.33 NA is explored on a random logic via design. From an earlier simulation …
EUV single patterning of random logic via using bright field mask
LE Tan, W Gillijns, JU Lee, D Xu… - Proc. of SPIE … - spiedigitallibrary.org
Imec logic N2+ design rule defines a minimum via pitch of 36nm. An EUV single patterning
solution at 0.33 NA is explored on a random logic via design. From an earlier simulation …
solution at 0.33 NA is explored on a random logic via design. From an earlier simulation …