Parallel arrays of sub-10 nm aligned germanium nanofins from an in situ metal oxide hardmask using directed self-assembly of block copolymers

C Cummins, A Gangnaik, RA Kelly, AJ Hydes… - Chemistry of …, 2015 - ACS Publications
High-mobility materials and non-traditional device architectures are of key interest in the
semiconductor industry because of the need to achieve higher computing speed and low …
被引用次数：29 相关文章

Parallel Arrays of Sub-10 nm Aligned Germanium Nanofins from an In Situ Metal Oxide Hardmask using Directed Self-Assembly of Block Copolymers

C Cummins, A Gangnaik, RA Kelly, AJ Hydes… - Chemistry of …, 2015 - hero.epa.gov
High-mobility materials and non-traditional device architectures are of key interest in the
semiconductor industry because of the need to achieve higher computing speed and low …
[PDF] academia.edu

[PDF][PDF] Parallel Arrays of Sub-10 nm Aligned Germanium Nanofins from an In Situ Metal Oxide Hardmask using Directed Self-Assembly of Block Copolymers

C Cummins, A Gangnaik, RA Kelly, AJ Hydes… - Chem. Mater, 2015 - academia.edu
High-mobility materials and non-traditional device architectures are of key interest in the
semiconductor industry because of the need to achieve higher computing speed and low …

Parallel arrays of sub-10 nm aligned germanium nanofins from an in-situ metal oxide hardmask using directed self-assembly of block copolymers

C Cummins, AS Gangnaik, RA Kelly, AJ Hydes… - 2015 - cora.ucc.ie
High-mobility materials and non-traditional device architectures are of key interest in the
semiconductor industry because of the need to achieve higher computing speed and low …

Parallel arrays of sub-10 nm aligned germanium nanofins from an in situ metal oxide hardmask using directed self-assembly of block copolymers

C Cummins, A Gangnaik, RA Kelly… - Chemistry of …, 2015 - eprints.soton.ac.uk
High-mobility materials and non-traditional device architectures are of key interest in the
semiconductor industry because of the need to achieve higher computing speed and low …

Parallel arrays of sub-10 nm aligned germanium nanofins from an in-situ metal oxide hardmask using directed self-assembly of block copolymers

C Cummins, AS Gangnaik, RA Kelly, AJ Hydes… - 2015 - cora.ucc.ie
High-mobility materials and non-traditional device architectures are of key interest in the
semiconductor industry because of the need to achieve higher computing speed and low …