Boron nitride substrates for high-quality graphene electronics

Nature nanotechnology, 2010 - nature.com
Graphene devices on standard SiO 2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene 1, 2, 3, 4 …
被引用次数：8158 相关文章

Boron nitride substrates for high-quality graphene electronics

CR Dean, AF Young, I Meric, C Lee, L Wang… - arXiv preprint arXiv …, 2010 - arxiv.org
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting
characteristics far inferior to the expected intrinsic properties of graphene [1-12]. While …
[PDF] psu.edu

[PDF][PDF] Boron nitride substrates for high-quality graphene electronics

CR Dean, AF Young, I Meric, C Lee, L Wang… - 2010 - Citeseer
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene1–12 …

Boron nitride substrates for high-quality graphene electronics.

CR Dean, AF Young, I Meric, C Lee… - Nature …, 2010 - search.ebscohost.com
Graphene devices on standard SiO< sub> 2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene. Although …

Boron nitride substrates for high-quality graphene electronics

CR Dean, AF Young, I Meric, C Lee, L Wang… - Nature …, 2010 - nature.com
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene …

[引用][C] Boron nitride substrates for high-quality graphene electronics

CR Dean, AF Young, I Meric, C Lee, L Wang… - Nature …, 2010 - cir.nii.ac.jp
Boron nitride substrates for high-quality graphene electronics | CiNii Research CiNii 国立情報学
研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学 …
[PDF] researchgate.net

[PDF][PDF] Boron nitride substrates for high quality graphene electronics

CR Dean, AF Young, I Meric, C Lee, L Wang… - researchgate.net
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting
characteristics far inferior to the expected intrinsic properties of graphene1–12. While …

Boron nitride substrates for high-quality graphene electronics

CR Dean, AF Young, I Meric, C Lee, L Wang… - Nature …, 2010 - pure.korea.ac.kr
Graphene devices on standard SiO 2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene. Although …

Boron nitride substrates for high-quality graphene electronics.

CR Dean, AF Young, I Meric, C Lee, L Wang… - Nature …, 2010 - europepmc.org
Graphene devices on standard SiO (2) substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene. Although …
[PDF] bioee-columbia.org

[PDF][PDF] Boron nitride substrates for high-quality graphene electronics

CR Dean, AF Young, I Meric, C Lee, L Wang… - 2010 - bioee-columbia.org
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene1–12 …